MBE Growth and Device Applications of InAs Heterosystems.

MBE growth of P-doped 1.3m InAs quantum dot lasers on silicon

Fractal terraces in MBE growth

MBE growth on high symmetry surfaces depends to some extent on the shape of the terraces which form the embryos of each new atomic layer. The conditions for formation of compact or fractal terraces are discussed in two limits: large terraces, to which a continuous description applies, and small terraces, which require that the discrete nature of matter be taken into account. In both cases it is...

Growth and quality control of MBE-based SiGe-HBT for amplifier applications

This study aims at getting precise growth and doping control of the well-designed multiple SiGe heterostructure layers for amplifier applications using MBE. Large efforts have been made in calibrating the deposition rates of Si and Ge, and the doping concentrations, in order to ensure the high quality growth. The measured cutoff frequency was 5.1 GHz, which is not high but in an agreement with ...

Growth, optical properties and device characterisation of InAs/GaAs quantum dot bilayers

The growth and optical properties of InAs/GaAs quantum dot (QD) bilayers are investigated, where the strain interactions between closely spaced QD layers are exploited to tailor the optical properties of the system. The underlying (seed) layer acts as a template for subsequent growth of the upper layer, whose properties can then be modified due to the greater freedom in the choice of growth con...

Parallel Monte Carlo simulation of MBE growth

We present a parallel algorithm for Monte Carlo simulation of molecular beam epitazial growth (MBE) focusing on the software we have developed and the ezperiences gained. An eficient sequential method to do MBE simulation was developed that uses a single binary tree t o store the rates of occwence of all possible events at a given time. The challenge was to find a ioay to adapt this method to a...